The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Dec. 27, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Yen-Di Tsen, Chung-Ho, TW;

Cheng Yen-Wei, Hsinchu, TW;

Jong-I Mou, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B24B 37/015 (2012.01); B24B 37/04 (2012.01); H01L 21/66 (2006.01); B24B 37/005 (2012.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); B24B 37/005 (2013.01); H01L 21/30625 (2013.01); H01L 22/26 (2013.01);
Abstract

One or more methods or systems for performing chemical mechanical planarization (CMP) are provided. The system includes at least one of an emitter, a detector, a spectroscopic signal generator, a comparator, a spectral library, a controller or a CMP device. A spectroscopic signal is generated and is used to determine the thickness of a first material formed on or from a wafer by comparing the spectroscopic signal to a spectral library. Responsive to the thickness not being equal to the desired thickness, the controller instructs the CMP device to perform a rotation to reduce the thickness of the first material. The system and method herein increase the sensitivity of the CMP, such that the thickness of the first material is reduced with greater accuracy and precision, as compared to where the thickness is not measured between consecutive rotations of a wafer.


Find Patent Forward Citations

Loading…