The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Sep. 20, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Veeraraghavan S. Basker, Schenectady, NY (US);

Nicolas L. Breil, Beacon, NY (US);

Oleg Gluschenkov, Tannersville, NY (US);

Shogo Mochizuki, Clifton Park, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/76801 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract

Voidless contact metal structures are provided. In one embodiment, a voidless contact metal structure is provided by first providing a first contact metal that contains a void within a contact opening. The void is then opened to provide a divot in the first contact metal. After forming a dielectric spacer atop a portion of first contact metal, a second contact metal is then formed that lacks any void. The second contact metal fills the entirety of the divot within the first contact metal. In another embodiment, two diffusion barrier structures are provided within a contact opening, followed by the formation of a contact metal structure that lacks any void.


Find Patent Forward Citations

Loading…