The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Jun. 24, 2014
Applicants:

Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E.v., Munich, DE;

Tu Dresden, Dresden, DE;

Inventors:

Hagen Bartzsch, Dresden, DE;

Daniel Glöß, Dresden, DE;

Peter Frach, Radeberg, DE;

Stephan Barth, Dresden, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); C23C 14/06 (2006.01); C23C 14/00 (2006.01); C23C 14/34 (2006.01); C30B 29/40 (2006.01); H01L 41/316 (2013.01); H01L 41/187 (2006.01); C30B 23/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0641 (2013.01); C23C 14/0036 (2013.01); C23C 14/0094 (2013.01); C23C 14/3414 (2013.01); C23C 14/3464 (2013.01); C23C 14/3485 (2013.01); C23C 14/35 (2013.01); C23C 14/352 (2013.01); C30B 23/02 (2013.01); C30B 29/403 (2013.01); H01L 41/187 (2013.01); H01L 41/316 (2013.01);
Abstract

A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlNO, where (0.1≤X≤1.2); (0.1≤Y≤1.2) and (0.001≤Z≤0.1).


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