The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Jul. 24, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Haigou Huang, Rexford, NY (US);
Jinsheng Gao, Clifton Park, NY (US);
Haifeng Sheng, Rexford, NJ (US);
Jinping Liu, Ballston Lake, NY (US);
Huy Cao, Rexford, NY (US);
Hui Zang, Guiderland, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/0217 (2013.01); H01L 21/0223 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02323 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/32105 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01);
Abstract
A contact etch stop layer includes a nitride layer formed over a sacrificial gate structure and a polysilicon layer formed over the nitride layer. During subsequent processing, the polysilicon layer is adapted to oxidize and form an oxide layer. The oxidation of the polysilicon layer effectively shields the underlying nitride contact etch stop layer from oxidation, which protects the mechanical integrity of the nitride layer.