The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2018

Filed:

May. 26, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Xintuo Dai, Rexford, NY (US);

Haigou Huang, Rexford, NY (US);

Xusheng Wu, Ballston Lake, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method includes forming a placeholder gate structure embedded in a dielectric layer. The placeholder gate structure includes a sacrificial material. A first hard mask layer is formed above the dielectric layer. The first hard mask layer and the sacrificial material are the same material. A second hard mask layer is formed above the first hard mask layer. The second hard mask layer is patterned to define an opening therein exposing a portion of the first hard mask layer and being disposed above a portion of the placeholder gate structure. The exposed portion of the first hard mask layer and the portion of the sacrificial material of the placeholder gate structure disposed below the opening are removed to define a gate cut cavity and divide the placeholder gate structure into first and second segments. A dielectric material is formed in the gate cut cavity.


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