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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9991350 B1

PDFFull Text
Date of Patent:
Jun. 05, 2018

Filed:

Jun. 21, 2016

Low resistance sinker contact

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Hong Yang, Richardson, TX (US);

Seetharaman Sridhar, Richardson, TX (US);

Yufei Xiong, Chengdu, CN;

Yunlong Liu, Chengdu, CN;

Zachary K. Lee, Fremont, CA (US);

Peng Hu, Chengdu, CN;

Assignee:

TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);

Attorneys:

Jacqueline J. Garner

Charles A. Brill

Frank D. Cimino

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/732 (2006.01); H01L 29/739 (2006.01); H01L 21/288 (2006.01); H01L 21/285 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 23/485 (2006.01); H01L 23/535 (2006.01); H01L 21/74 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/2855 (2013.01); H01L 21/2885 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/743 (2013.01); H01L 23/485 (2013.01); H01L 23/535 (2013.01); H01L 29/0653 (2013.01); H01L 29/0865 (2013.01); H01L 29/1087 (2013.01); H01L 29/4175 (2013.01); H01L 29/41708 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/45 (2013.01); H01L 29/732 (2013.01); H01L 29/7395 (2013.01); H01L 29/7809 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/7835 (2013.01); H01L 29/1095 (2013.01); H01L 29/456 (2013.01);
Abstract

An semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into a second doped layer and wherein the first doped layer overlies the second doped layer and wherein the second doped layer is more heavily doped that the first doped layer and wherein the low resistance sinker contact is filled with a metallic material. A method for forming a semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into a second doped layer and wherein the first doped layer overlies the second doped layer and wherein the second doped layer is more heavily doped that the first doped layer and wherein the low resistance sinker contact is filled with a metallic material.

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