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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9991207 B1

PDFFull Text
Date of Patent:
Jun. 05, 2018

Filed:

May. 24, 2016

Test key strcutures, integrated circuit packages and methods of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shao-Yun Chen, Tao-yuan, TW;

Hsien-Wei Chen, Hsinchu, TW;

Li-Hsien Huang, Hsinchu County, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Moazzam Hossain

Assistant Examiner:

Farun Lu

Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 23/528 (2006.01); H01L 21/66 (2006.01); H01L 23/48 (2006.01); H01L 25/18 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 25/065 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/56 (2013.01); H01L 21/6835 (2013.01); H01L 21/768 (2013.01); H01L 22/32 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 24/10 (2013.01); H01L 24/18 (2013.01); H01L 25/0655 (2013.01); H01L 25/18 (2013.01); H01L 2221/68372 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54486 (2013.01);
Abstract

Test key structures, integrated circuit packages and methods of forming the same are disclosed. One of the test key structures includes a first pattern over a polymer layer, and at least one second pattern covering the first pattern. Besides, the second pattern and the first pattern have substantially the same outer profile, one of the first pattern and the second pattern includes a dielectric material and the other of the first pattern and the second pattern includes a metal material.

Find Patent Forward Citations

Chen, Shao-Yun. (2018). Test key strcutures, integrated circuit packages and methods of forming the same (U.S. Patent No. 9991207). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9991207

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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