The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Sep. 12, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tung-Heng Hsieh, Zhudong Town, TW;
Hui-Zhong Zhuang, Kaohsiung, TW;
Chung-Te Lin, Tainan, TW;
Sheng-Hsiung Wang, Zhubei, TW;
Ting-Wei Chiang, New Taipei, TW;
Li-Chun Tien, Tainan, TW;
Tsung-Chieh Tsai, Chu-Bei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate having an active area, a gate structure over the active area, a lower conductive layer over and electrically coupled to the active area, and an upper conductive layer over and electrically coupled to the lower conductive layer. The lower conductive layer is at least partially co-elevational with the gate structure. The lower conductive layer includes first and second conductive segments spaced from each other. The upper conductive layer includes a third conductive segment overlapping the first and second conductive segments. The third conductive segment is electrically coupled to the first conductive segment, and electrically isolated from the second conductive segment.