The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
May. 22, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Materials Co., Ltd., Yokohama-Shi, Kanagawa-Ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Materials Co., Ltd., Kanagawa-Ken, JP;
Abstract
The present invention provides a component for a plasma processing apparatus, the component comprising: a base material; an underlayer covering a surface of the base material; and an yttrium oxide film covering a surface of the underlayer, wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m·K or less, the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope, the yttrium oxide film has a film thickness of 10 μm or more and a film density of 96% or more, and when a surface of the yttrium oxide film is observed under a microscope, an area coverage ratio of the particulate portions is 0 to 20% in an observation range of 20 μm×20 μm and an area coverage ratio of the non-particulate portions is 80 to 100% in the observation range.