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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9985023 B1

PDFFull Text
Date of Patent:
May. 29, 2018

Filed:

Feb. 21, 2017

Structure and formation method of semiconductor device structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Fa-Chih Liu, Hsinchu, TW;

Shih-Ping Hong, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

George Fourson, III

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/823418 (2013.01); H01L 21/823821 (2013.01); H01L 29/41783 (2013.01); H01L 29/66545 (2013.01);
Abstract

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes an isolation feature over the semiconductor substrate. The fin structure is surrounded by the isolation feature. The semiconductor device structure further includes a gate stack covering the fin structure. In addition, the semiconductor device structure includes a source or drain (S/D) structure covering the fin structure. The semiconductor device structure also includes a conductive contact connected to the S/D structure. The conductive contact includes a first portion and a second portion. The second portion extends from the first portion to the S/D structure. The first portion has a first width adjoining the second portion. The second portion has a second width greater than the first width.

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