The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Sep. 15, 2015
Applicant:
Winbond Electronics Corp., Taichung, TW;
Inventors:
Assignee:
WINBOND ELECTRONICS CORP., Taichung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 45/04 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01);
Abstract
A self-rectifying resistive random access memory (RRAM) cell structure is provided. The self-rectifying RRAM cell structure includes a first electrode. An insulator-metal-transition (IMT) material layer is disposed on the first electrode. A barrier layer is disposed on the IMT material layer. A second electrode is disposed on the barrier layer. The IMT material layer is separated from the second electrode by the barrier layer.
Hou, Tuo-Hung. (2018). Self-rectifying resistive random access memory cell structure (U.S. Patent No. 9978941). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9978941
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile