The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Sep. 09, 2016
Thruchip Japan Inc., Tokyo, JP;
Tadahiro Kuroda, Yokohama, JP;
THRUCHIP JAPAN INC., Tokyo, JP;
Abstract
The invention relates to a multilayer semiconductor integrated circuit device which is provided with a smaller space for a three-dimensional multilayer configuration at a lower cost and with a sufficient power supply quality. A first semiconductor integrated circuit device is provided with a first penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the first power supply potential, and a second penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the second power supply potential. A second semiconductor integrated circuit device having a first electrode and a second electrode is layered on top of the first semiconductor integrated circuit device so that the first electrode and the second electrode are respectively connected to the first penetrating semiconductor region and the second penetrating semiconductor region.