The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Jan. 26, 2017
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Bon-Woong Koo, Andover, MA (US);
Jun Lu, Beverly, MA (US);
Frank Sinclair, Boston, MA (US);
Eric D. Hermanson, Georgetown, MA (US);
Joseph E. Pierro, Danvers, MA (US);
Michael D. Johnson, Peabody, MA (US);
Michael S. DeLucia, Gloucester, MA (US);
Antonella Cucchetti, Manchester-by-the-Sea, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.