The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Feb. 13, 2015
Applicant:
Nissan Chemical Industries, Ltd., Tokyo, JP;
Inventors:
Noriaki Fujitani, Toyama, JP;
Rikimaru Sakamoto, Toyama, JP;
Assignee:
NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); C09D 125/16 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); C09D 133/02 (2006.01); G03F 7/32 (2006.01); C08F 212/12 (2006.01); H01L 21/027 (2006.01); C08F 220/06 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08F 212/12 (2013.01); C09D 125/16 (2013.01); C09D 133/02 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/32 (2013.01); H01L 21/0271 (2013.01); C08F 220/06 (2013.01);
Abstract
A resist overlayer film forming composition for use in a lithography process in semiconductor device production does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and can be developed with a developer after exposure. A resist overlayer film forming composition includes: a polymer (P) including unit structures of Formula (1) and Formula (2) and having a weight average molecular weight, measured by gel permeation chromatography, of 500 to 2,000; and a Cether compound as a solvent