The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
May. 01, 2012
You-hua Chou, Taipei, TW;
Chih-tsung Lee, Hsinchu, TW;
Shu-fen Wu, Yilan, TW;
Chin-hsiang Lin, Hsin-Chu, TW;
You-Hua Chou, Taipei, TW;
Chih-Tsung Lee, Hsinchu, TW;
Shu-Fen Wu, Yilan, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.