The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Mar. 01, 2017
Applicant:
Microcosm Technology Co., Ltd., Tainan, TW;
Inventors:
Assignee:
Microcosm Technology Co., Ltd., Tainan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/24 (2006.01); H01L 29/16 (2006.01); C08G 73/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); C08G 73/22 (2013.01); H01L 23/293 (2013.01); H01L 23/3171 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 29/1604 (2013.01); H01L 29/24 (2013.01); H01L 29/247 (2013.01); H01L 29/4908 (2013.01); H01L 29/51 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/7869 (2013.01); H01L 29/78669 (2013.01); H01L 29/78693 (2013.01);
Abstract
A laminate structure of a thin film transistor includes a thin film transistor array and a passivation layer. The thin film transistor array includes a gate, a channel layer formed on the gate, a gate insulating layer formed between the gate and the channel layer, and a source and a drain formed on both sides of the channel layer. The passivation layer is formed on the thin film transistor array, and the passivation layer has at least one contact hole exposing the source or the drain, wherein the passivation layer is an oxazole-containing photosensitive polyimide (PSPI) resin.