The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jun. 03, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Pranita Kerber, Mount Kisco, NY (US);
Qiqing C. Ouyang, Yorktown Heights, NY (US);
Alexander Reznicek, Troy, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/365 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/201 (2006.01); H01L 29/207 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/20 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01); H01L 29/66522 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/41783 (2013.01);
Abstract
A metal-oxide-semiconductor field effect transistor (MOSFET) and a method of fabricating a MOSFET are described. The method includes depositing and patterning a dummy gate stack above an active channel layer formed on a base. The method also includes selectively etching the active channel layer leaving a remaining active channel layer, and epitaxially growing silicon doped active channel material adjacent to the remaining active channel layer.