The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Nov. 16, 2016
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Che-Fu Chuang, Taichung, TW;

Hsiu-Han Liao, Taichung, TW;

Yao-Ting Tsai, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11521 (2017.01); H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/417 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/28273 (2013.01); H01L 29/41758 (2013.01); H01L 29/42328 (2013.01); H01L 29/4975 (2013.01); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract

Provided is a memory device including a substrate and a gate structure. The gate structure is located on the substrate. The gate structure includes a stack gate and a selection gate aside the stack structure. A topmost surface of the selection gate is lower than a topmost surface of the stack gate.


Find Patent Forward Citations

Loading…