The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Nov. 14, 2016
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device for ESD protection, includes a drain region, a first doped region, a second doped region and a source region. The drain region is disposed in a substrate at a first side of a gate and the drain region has a first conductivity type. The first doped region is disposed in a second doped well at a second side of the gate and has a second conductivity type. The source region is also disposed in the second doped well and has the first conductive type, and the source region surrounds the first doped region from a topview. The second doped region is disposed in the second doped well and has the second conductive type, and the second doped region is disposed between the gate and the source region, wherein a plurality of contacts is electrically connected to the second doped region.