The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Oct. 31, 2014
Tokyo Electron Limited, Tokyo, JP;
Junwei Bao, Los Altos, CA (US);
Ching-Ling Meng, Sunnyvale, CA (US);
Holger Tuitje, Fremont, CA (US);
Mihail Mihaylov, San Jose, CA (US);
Yan Chen, Santa Clara, CA (US);
Zheng Yan, San Jose, CA (US);
Haixing Zou, San Jose, CA (US);
Hanyou Chu, Palo Alto, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.