The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jul. 23, 2013
Applicant:
Lam Research Corporation, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C01B 35/14 (2006.01); C23C 16/34 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 45/00 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C01B 35/146 (2013.01); C23C 16/30 (2013.01); C23C 16/342 (2013.01); C23C 16/45531 (2013.01); H01L 21/28562 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/16 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Ternary tungsten boride nitride (WBN) thin films and related methods of formation are provided. The films are have excellent thermal stability, tunable resistivity and good adhesion to oxides. Methods of forming the films can involve thermal atomic layer deposition (ALD) processes in which boron-containing, nitrogen-containing and tungsten-containing reactants are sequentially pulsed into a reaction chamber to deposit the WBN films. In some embodiments, the processes include multiple cycles of boron-containing, nitrogen-containing and tungsten-containing reactant pulses, with each cycle including multiple boron-containing pulses.