The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Sep. 14, 2015
Qualcomm Incorporated, San Diego, CA (US);
Niranjan Sunil Mudakatte, San Diego, CA (US);
Daeik Daniel Kim, Del Mar, CA (US);
David Francis Berdy, San Diego, CA (US);
Changhan Hobie Yun, San Diego, CA (US);
Je-Hsiung Jeffrey Lan, San Diego, CA (US);
Chengjie Zuo, Santee, CA (US);
Mario Francisco Velez, San Diego, CA (US);
Robert Paul Mikulka, Oceanside, CA (US);
Jonghae Kim, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An augmented capacitor structure includes a substrate and a first capacitor plate of a first conductive layer on the substrate. The augmented capacitor structure also includes an insulator layer on a surface of the first capacitor plate facing away from the substrate and a second capacitor plate. The second capacitor plate includes a second conductive layer on the insulator layer, supported by the first capacitor plate as a first capacitor. A second capacitor electrically is coupled in series with the first capacitor. The first capacitor plate is shared by the first capacitor and the second capacitor as a shared first capacitor plate. An extended first capacitor plate includes a first dummy portion of a third conductive layer and a first dummy via bar extending along the surface of the shared first capacitor plate. The first dummy portion extends along and is supported by the first dummy via bar.