The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Feb. 28, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Jen-Po Huang, Tainan, TW;
Chin-Fu Lin, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Xu Yang Shen, Singapore, SG;
Seng Wah Liau, Singapore, SG;
Yen-Chen Chen, Tainan, TW;
Ko-Wei Lin, Taichung, TW;
Chun-Ling Lin, Tainan, TW;
Kuo-Chih Lai, Tainan, TW;
Ai-Sen Liu, Hsinchu, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
Yang-Ju Lu, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: forming a capacitor bottom metal (CBM) layer on a material layer; forming a silicon layer on the CBM layer; forming a capacitor dielectric layer on the silicon layer; and forming a capacitor top metal (CTM) layer on the capacitor dielectric layer.