The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Dec. 11, 2017
Globalfoundries Inc., Grand Cayman, KY;
Mukta G. Farooq, Hopewell Junction, NY (US);
John A. Fitzsimmons, Poughkeepsie, NY (US);
Anthony K. Stamper, Burlington, VT (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include providing a substrate having a front side and a back side, the substrate including a deep trench (DT) capacitor within the substrate extending toward the back side of the substrate; etching the substrate on the back side of the substrate to remove at least a portion of the substrate on the back side; forming a first dielectric layer covering the back side of the substrate and extending away from the front side of the substrate; and forming a through silicon via (TSV) adjacent to the DT capacitor, the TSV extending through the first dielectric layer toward the front side of the substrate.