The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Jul. 28, 2014
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Daisuke Bizen, Tokyo, JP;

Makoto Sakakibara, Tokyo, JP;

Hiroya Ohta, Tokyo, JP;

Junichi Tanaka, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/24 (2006.01); H01J 37/244 (2006.01); H01J 37/26 (2006.01);
U.S. Cl.
CPC ...
H01J 37/244 (2013.01); H01J 37/24 (2013.01); H01J 37/261 (2013.01); H01J 2237/221 (2013.01); H01J 2237/226 (2013.01);
Abstract

A simulation device calculates a detection number of electrons generated by charged particles radiated to a sample by a simulation and generates a simulation image of the sample. The simulation device holds penetration length information () in which incidence conditions of the charged particles and a penetration length are associated with each other, sample configuration information () which shows a configuration of a sample, and emission electron number information in which the incidence conditions of the charged particles and an emission electron number are associated with each other. The simulation device calculates the number of electrons emitted from a predetermined incidence point, on the basis of incidence conditions at the predetermined incidence point, the penetration length information (), the sample configuration information (), and the emission electron number information.


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