The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Dec. 01, 2016
Applicant:
Canon Anelva Corporation, Kawasaki-shi, JP;
Inventors:
Assignee:
CANON ANELVA CORPORATION, Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); G11B 5/31 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3163 (2013.01); H01J 37/32422 (2013.01); H01J 2237/08 (2013.01);
Abstract
To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.