The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Mar. 03, 2017
Winbond Electronics Corp., Taichung, TW;
Yi-Hsiu Chen, Zhubei, TW;
Ming-Hung Hsieh, Yilan, TW;
Po-Yen Hsu, New Taipei, TW;
Ting-Ying Shen, Chiayi, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
A resistive random-access memory structure and a method for fabricating a resistive random-access memory structure are described. A first dielectric layer is formed on a substrate. A plurality of bottom electrodes are independently embedded in the first dielectric layer. A transition metal oxide layer covers the plurality of bottom electrodes and extends onto a portion of the first dielectric layer. The minimum distance between the bottom electrode and a sidewall of the transition metal oxide layer is a first distance. The first distance is in a range of 10 nm to 200 μm. A top electrode is formed on the transition metal oxide layer.