The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2018

Filed:

Dec. 24, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Veeraraghavan S. Basker, Schenectady, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Benjamin Ryan Cipriany, Wappingers Falls, NY (US);

Ramachandra Divakaruni, Ossining, NY (US);

Brian J. Greene, Wappingers Falls, NY (US);

Ali Khakifirooz, Los Altos, CA (US);

Byeong Yeol Kim, Lagrangeville, NY (US);

William Larsen Nicoll, Hopewell Junction, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/108 (2006.01); H01L 21/324 (2006.01); H01L 21/84 (2006.01); H01L 29/94 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10829 (2013.01); H01L 21/324 (2013.01); H01L 21/845 (2013.01); H01L 27/10867 (2013.01); H01L 27/1211 (2013.01); H01L 29/945 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/28518 (2013.01); H01L 21/76895 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01);
Abstract

Structures and methods for deep trench capacitor connections are disclosed. The structure includes a reduced diameter top portion of the capacitor conductor. This increases the effective spacing between neighboring deep trench capacitors. Silicide or additional polysilicon are then deposited to complete the connection between the deep trench capacitor and a neighboring transistor.


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