The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2018

Filed:

Dec. 13, 2016
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Kai-Chieh Hsu, Taoyuan, TW;

Feng-Min Lee, Hsinchu, TW;

Yu-Yu Lin, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0064 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0092 (2013.01);
Abstract

A method to program a programmable resistance memory cell includes performing one or more iterations until a verifying passes. The iterations include a) applying a programming pulse to the memory cell, and, b) after applying the programming pulse, verifying if the resistance of the memory cell is in a target resistance range. After an iteration of the one or more iterations in which the verifying passes, c) a stabilizing pulse with a polarity the same as the programming pulse is applied to the memory cell. After applying the stabilizing pulse, a second verifying determines if the resistance of the programmable element is in the target resistance range. Iterations comprising steps a), b), c), and d) are performed until the second verifying passes. Methods and apparatus are described to program a plurality of such cells, including applying a stabilizing pulse of the same polarity after programming.


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