The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Dec. 12, 2016
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Arun Virupaksha Gowda, Rexford, NY (US);

Raymond Albert Fillion, Niskayuna, NY (US);

Paul Alan McConnelee, Albany, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 23/522 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 21/486 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01);
Abstract

An electronics package includes an insulating substrate, a semiconductor device having a top surface coupled to a first side of the insulating substrate, and a pass-through structure coupled to the first side of the insulating substrate. The pass-through structure includes an insulating core, a resistor disposed proximate a top surface of the insulating core, and at least one through-hole structure forming at least one conductive pathway through a thickness of the insulating core. A patterned metallization layer is formed on a second side of the insulating substrate. The patterned metallization layer is electrically coupled to at least one first conductive pad of the semiconductor device and electrically couples at least one second conductive pad of the semiconductor device to a through-hole structure of the at least one through-hole structure through the resistor.


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