The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Jan. 05, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chien-An Chen, Zhubei, TW;
Wen-Jiun Liu, Zhunan Township, TW;
Chun-Chieh Lin, Taichung, TW;
Hung-Wen Su, Jhubei, TW;
Ming Hsing Tsai, Chu-Pei, TW;
Syun-Ming Jang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a conductive structure includes forming a first opening and a second opening in a dielectric layer on a substrate, wherein the first opening is narrower than the second opening. The method further includes depositing a diffusion barrier layer to line the first opening and the second opening. The method further includes forming a metal layer over the diffusion barrier layer to fill at least portions of the first opening and the second opening, wherein a maximum thickness of the metal layer in the first opening is greater than a maximum thickness of the metal layer in the second opening.