The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Jan. 23, 2017
Applicant:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Inventors:
Christopher R. Hatem, Seabrook, NH (US);
Christopher A. Rowland, Rockport, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 21/67 (2006.01); H01L 21/8234 (2006.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
H01L 21/225 (2013.01); H01L 21/223 (2013.01); H01L 21/265 (2013.01); H01L 21/324 (2013.01); H01L 21/67213 (2013.01); H01L 21/823431 (2013.01); H01L 29/66803 (2013.01);
Abstract
A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.