The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Sep. 17, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Chiang Tu, Tauyen, TW;
Chun-Lang Chen, Tainan County, TW;
Boming Hsu, Tainan, TW;
Tran-Hui Shen, Yunlin County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;
Abstract
Provided is a method for creating a mask blank that includes a capping layer and a shifter layer. The capping layer is optically compatible and process compatible with the shifter layer. The method may include providing a cleaned and polished mask substrate to a deposition tool and depositing, within the deposition tool, a shifter layer over a cleaned and polished mask substrate. The shifter layer may include each material of a set of materials in a first proportion. The method may also include depositing an additional layer over the shifter layer, the additional layer providing a capping layer over the shifter layer. The capping layer includes the materials in a second proportion unequal to the first proportion. The capping layer includes molybdenum, silicon, and nitride in a proportion that aids in detection by a residual gas analyzer. Also provided is also a mask blank structure incorporating the compatible capping layer.