The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

May. 05, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hirofumi Takeguchi, Koshi, JP;

Tomohiro Iseki, Koshi, JP;

Yuichi Terashita, Koshi, JP;

Assignee:

Tokyo Electron Limited, Minato-Ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/12 (2006.01); G03F 7/32 (2006.01); G03F 7/16 (2006.01); B05D 1/00 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G03F 7/32 (2013.01); G03F 7/162 (2013.01); B05D 1/005 (2013.01); H01L 21/6715 (2013.01);
Abstract

A developing method for forming a resist film having a high uniformity of CD distribution. After exposure of a resist film on a substrate surface to form a resist pattern, the method includes sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer. In step (A), a liquid-contact nozzle, having an ejection orifice for the developer and a lower surface extending laterally from the ejection orifice and disposed opposite the resist film, is used. In step (C), the boundary between a reaction-terminated area of the surface of the resist film, and an in-progress reaction area of the surface of the resist film, is moved from the center toward the periphery of the resist film.


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