The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Sep. 19, 2016
Applicant:
Pdf Solutions, Inc., San Jose, CA (US);
Inventors:
Sharad Saxena, Richardson, TX (US);
Yuan Yu, San Jose, CA (US);
Assignee:
PDF Solutions, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 27/26 (2006.01); G01R 31/28 (2006.01); G01B 7/02 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
G01R 27/2605 (2013.01); G01B 7/02 (2013.01); G01R 31/2896 (2013.01); H01L 23/528 (2013.01); H01L 29/1037 (2013.01); H01L 29/42364 (2013.01);
Abstract
Disclosed are methods for measuring capacitance in presence of leakage in integrated circuits. In particular, it teaches a method of measuring leaky capacitors using charge based capacitance measurement (CBCM) technique taking into account parasitic resistance. Fast and accurate measurement of capacitances allows the estimation of a number of technology parameters like: gate-dielectric thickness, gate critical dimension, trench depth in a damascene metallization process, height of a fin in a Fin FET device etc.