The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Jun. 16, 2016
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Shin-Cheng Lin, Tainan, TW;
Hsiao-Ling Chiang, Hsinchu, TW;
Assignee:
VANGAURD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 49/02 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/0653 (2013.01); H01L 29/0692 (2013.01); H01L 29/0886 (2013.01); H01L 29/405 (2013.01); H01L 29/4238 (2013.01);
Abstract
A high-voltage semiconductor device includes a MOS device and a resistor device. The MOS device has a source, a drain, a drain insulation region adjacent to the drain, and a gate adjacent to the source. The resistor device is formed on the drain insulation region and is electrically connected to the drain. The resistor device has a plurality of resistor sections connected in series, and each of the plurality of resistor sections has a curved shape.