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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9947592 B1

PDFFull Text
Date of Patent:
Apr. 17, 2018

Filed:

Nov. 16, 2015

Finfet devices and methods of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jie-Cheng Deng, New Taipei, TW;

Yi-Jen Chen, Hsinchu, TW;

Horng-Huei Tseng, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Sophia Nguyen

Int. Cl.
CPC ...
H01L 21/8228 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 27/108 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/823487 (2013.01); H01L 21/823878 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823807 (2013.01); H01L 27/0924 (2013.01); H01L 27/10826 (2013.01); H01L 29/0653 (2013.01); H01L 2924/13067 (2013.01);
Abstract

FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes a substrate, multiple gates and a single spacer wall. The substrate is provided with multiple fins extending in a first direction. The multiple gates extending in a second direction different from the first direction are provided respectively across the fins. Two of the adjacent gates are arranged end to end. The single spacer wall extending in the first direction is located between the facing ends of the adjacent gates and is in physical contact with a gate dielectric material of each of the adjacent gates.

Find Patent Forward Citations

Deng, Jie-Cheng. (2018). Finfet devices and methods of forming the same (U.S. Patent No. 9947592). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9947592

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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