The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Mar. 27, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Yu Lin, New Taipei, TW;

Feng-Min Lee, Hsinchu, TW;

Kai-Chieh Hsu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0064 (2013.01);
Abstract

A method for operating a resistance switching memory device is provided, wherein the method includes a first program process, and the first program process includes steps as follows: A programming pulse having a first polarity is firstly applied to at least one resistance switching memory cell of the NVM device. A first verifying pulse with a verifying voltage is then applied to the resistance switching memory cell. A first settling pulse is applied to the resistance switching memory cell prior to or after the verifying pulse is applied, wherein the first settling pulse includes a settling voltage having a second polarity opposite to the first polarity and an absolute value substantially less than that of the verifying voltage.


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