The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Mar. 17, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Han-Chin Chiu, Kaohsiung, TW;
Sheng-De Liu, Taoyuan County, TW;
Yu-Syuan Lin, Changhua County, TW;
Yao-Chung Chang, Hsinchu County, TW;
Cheng-Yuan Tsai, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7784 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01);
Abstract
A semiconductor structure comprises a semiconductive substrate comprising a top surface, a III-V compound layer over the semiconductive substrate, and a first passivation layer over the III-V compound layer. The semiconductor structure also includes an etch stop layer over the first passivation layer. The semiconductor structure further includes a gate stack over the first passivation layer and surrounded by the etch stop layer.