The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Mar. 23, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Veeraraghavan S. Basker, Schenectady, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Charles W. Koburger, III, Delmar, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/6681 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A structure including a gate electrode above and perpendicular to a plurality of semiconductor fins, a pair of spacers disposed on opposing sides of the gate electrode, and a gap fill material above a semiconductor substrate, directly below the gate electrode, and between the plurality of fins, the gate electrode separates the gap fill material from each of the plurality of fins.