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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9941256 B1

PDFFull Text
Date of Patent:
Apr. 10, 2018

Filed:

Dec. 21, 2016

Inverse diode stack

Applicant:

Ixys Corporation, Milpitas, CA (US);

Inventors:

Frank Ettingshausen, Darmstadt, DE;

Thomas Spann, Fuerth, DE;

Elmar Wisotzki, Darmstadt, DE;

Assignee:

IXYS Corporation, Milpitas, CA (US);

Attorneys:

Imperium Patent Works

T. Lester Wallace

Darien K. Wallace

Primary Examiner:

Daniel Puentes

Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 23/498 (2006.01); H01L 23/057 (2006.01); H01L 29/861 (2006.01); H01L 23/00 (2006.01); H03K 17/10 (2006.01); H01L 29/06 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 25/074 (2013.01); H01L 23/057 (2013.01); H01L 23/3121 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 29/0684 (2013.01); H01L 29/861 (2013.01); H03K 17/10 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83895 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1203 (2013.01);
Abstract

A packaged inverse diode device exhibits superior commutation robustness. The device includes a stack of inverse diodes disposed within a housing. Each adjacent pair of inverse diodes is bonded together by an intervening DMB (Direct Metal Bonded) substrate structure. At one end of the stack of diode dice and DMB substrate structures is attached a first metal terminal. A second metal terminal is attached to the other end of the stack. The two terminals serve as package terminals of the overall device. In a novel method, the device undergoes severe commutation. A large forward current is made to flow through the diode stack, followed by a rapid reversal of the voltage across the stack to a large reverse polarity voltage. Despite a substantial rate of change of the commutation current at the onset of the reverse voltage condition, the inverse diode device is not damaged.

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