The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Apr. 03, 2015
Micron Technology, Inc., Boise, ID (US);
Jaspreet S. Gandhi, Boise, ID (US);
Wayne H. Huang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Semiconductor devices having a through-silicon-via and methods of forming the same are described herein. As an example, a semiconductor device may include a substrate material, a through-silicon-via protrusion extending from the substrate material, a first dielectric material formed on the substrate material, a second dielectric material formed on the first dielectric material, and an interconnect formed on the through-silicon-via protrusion, where the interconnect formed is in an opening in the second dielectric material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile