The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Aug. 16, 2011
Charan Gurumurthy, Higley, AZ (US);
Islam Salama, Chandler, AZ (US);
Houssam Jomaa, Phoenix, AZ (US);
Ravi Tanikella, Phoenix, AZ (US);
Charan Gurumurthy, Higley, AZ (US);
Islam Salama, Chandler, AZ (US);
Houssam Jomaa, Phoenix, AZ (US);
Ravi Tanikella, Phoenix, AZ (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.