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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9935055 B1

PDFFull Text
Date of Patent:
Apr. 03, 2018

Filed:

Sep. 22, 2016

Methods of manufacturing a semiconductor device by forming a separation trench

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Andreas Meiser, Sauerlach, DE;

Markus Zundel, Egmating, DE;

Martin Poelzl, Ossiach, AT;

Paul Ganitzer, Villach, AT;

Georg Ehrentraut, Villach, AT;

Assignee:

Infineon Technologies Austria AG, Villach, AT;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

George Fourson, Iii

Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/544 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01); H01L 21/822 (2006.01); H01L 23/538 (2006.01); H01L 21/784 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/76224 (2013.01); H01L 21/76283 (2013.01); H01L 23/562 (2013.01); H01L 21/78 (2013.01); H01L 21/784 (2013.01); H01L 21/822 (2013.01); H01L 23/5384 (2013.01); H01L 29/78 (2013.01); H01L 2223/5446 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a separation trench into a first main surface of a semiconductor substrate and removing substrate material from a second main surface of the semiconductor substrate, so as to thin the substrate to a thickness of less than 100 μm, the second main surface being opposite to the first main surface, so as to uncover a bottom side of the trench. Additional methods of manufacturing semiconductor devices are provided.

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Meiser, Andreas. (2018). Methods of manufacturing a semiconductor device by forming a separation trench (U.S. Patent No. 9935055). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9935055

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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