The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Dec. 14, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Werner Schustereder, Villach, AT;
Helmut Oefner, Zorneding, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Sandeep Walia, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/02 (2006.01); H01L 21/223 (2006.01); H01L 21/306 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3225 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02598 (2013.01); H01L 21/2236 (2013.01); H01L 21/26506 (2013.01); H01L 21/30604 (2013.01);
Abstract
Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming the oxygen containing region includes introducing oxygen via a first surface into the semiconductor wafer. The method further includes creating vacancies at least in the oxygen containing region and annealing at least the oxygen containing region in an annealing process so as to form oxygen precipitates.