The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Jan. 09, 2017
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Jean-Pierre Colinge, Hsinchu, TW;
Chia-Wen Liu, Taipei, TW;
Wei-Hao Wu, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Carlos H. Diaz, Mountain View, CA (US);
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
Semiconductor devices and methods for forming semiconductor devices are provided. A vertical channel structure extends from a substrate and is formed as a channel between a source region and a drain region. A first metal gate surrounds a portion of the vertical channel structure and has a gate length. The first metal gate has a first gate section with a first workfunction and a first thickness. The first metal gate also has a second gate section with a second workfunction and a second thickness. The first thickness is different from the second thickness, and the sum of the first thickness and the second thickness is equal to the gate length. A ratio of the first thickness to the second thickness is chosen to achieve a desired threshold voltage level for the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile