The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Sep. 23, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Yi-Tzu Chen, Hsinchu, TW;

Anjana Singh, Hsinchu, TW;

Che-Ju Yeh, Kaohsiung, TW;

Hau-Tai Shieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4091 (2006.01); G11C 7/12 (2006.01); G11C 5/06 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 5/06 (2013.01); G11C 7/06 (2013.01);
Abstract

A memory device includes a memory cell, a local bit line, a data line, first and second pass gate circuits, and a sense amplifier. The local bit line is coupled to the memory cell. The first pass gate circuit is coupled to the local bit line and the data line and is configured to couple the local bit line to the data line. The second pass gate circuit is coupled to the data line and the global bit line and is configured to couple the data line to the global bit line. The sense amplifier is coupled to the data line.


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