The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Dec. 14, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
Se Hoon Oh, Hwaseong-si, KR;
Seongyul Park, Seoul, KR;
Chin Moo Cho, Seoul, KR;
Yunjung Choi, Seoul, KR;
Gyu-Hee Park, Hwaseong-si, KR;
Youn-Joung Cho, Hwaseong-si, KR;
Younsoo Kim, Yongin-si, KR;
Jae Hyoung Choi, Hwaseong-si, KR;
Abstract
The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.