The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Oct. 27, 2014
Applicant:

Shin-etsu Handotai Co., Ltd., Tokyo, JP;

Inventor:

Masahiro Kato, Takasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/673 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/67109 (2013.01); H01L 21/67306 (2013.01);
Abstract

A method for heat treatment of a plurality of semiconductor wafers horizontally placed on a supporting member coated with SiC in a vertical heat treatment furnace includes performing heat treatments while switching the supporting member and a heat treatment condition such that the supporting member is continuously used in a heat treatment under either one of a first condition and a second condition for a certain period of time and then continuously used in a heat treatment under the other condition for a certain period of time, wherein the heat treatment under the first condition is performed at 1000° C. or higher in an atmosphere containing a rare gas and not containing oxygen, and the heat treatment under the second condition is performed at 1000° C. or higher in an atmosphere containing oxygen and not containing a rare gas. As a result, slip dislocation can be inhibited.


Find Patent Forward Citations

Loading…