The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Jun. 04, 2015
Dnf Co., Ltd., Daejeon, KR;
Se Jin Jang, Daegu, KR;
Sang-Do Lee, Daejeon, KR;
Jong Hyun Kim, Daejeon, KR;
Sung Gi Kim, Daejeon, KR;
Sang Yong Jeon, Sejong, KR;
Byeong-il Yang, Daejeon, KR;
Jang Hyeon Seok, Daejeon, KR;
Sang Ick Lee, Daejeon, KR;
Myong Woon Kim, Daejeon, KR;
DNF CO., LTD., Daejeon, KR;
Abstract
Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).